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| TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 60V 100V RDS(ON) (max) 3.0 3.0 ID(ON) (min) 2A 2A VGS(th) (max) 2.0V 2.0V Order Number / Package TO-92 TN0106N3 TN0110N3 Die -- TN0110ND 7 MIL visual screening available Features s Low threshold -- 2.0V max. s High input impedance s Low input capacitance -- 50pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications s Logic level interfaces - ideal for TTL and CMOS s Solid state relays s Battery operated systems s Photo voltaic drives s Analog switches s General purpose line drivers s Telecom switches Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. BVDSS BVDGS 20V -55C to +150C 300C SGD TO-92 7-35 TN0106/TN0110 Thermal Characteristics Package TO-92 ID (continuous)* 0.5A ID (pulsed) 2.0A Power Dissipation @ TC = 25C 1.0W C/W 125 jc C/W 170 ja IDR* 0.5A IDRM 2.0A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current TN0110 TN0106 Min 100 60 0.6 -3.2 2.0 -5.0 100 10 500 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 0.75 2.0 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 225 1.4 3.4 2.0 1.6 0.6 400 50 25 4.0 2.0 3.0 6.0 3.0 1.0 400 60 35 8.0 5.0 5.0 7.0 6.0 1.5 V ns ISD = 0.5A, VGS = 0V ISD = 0.5A, VGS = 0V ns VDD = 25V ID = 1.0A RGEN = 25 pF VGS = 0V, VDS = 25V f = 1 MHz 4.5 3.0 1.1 %/C m A A V mV/C nA VGS = VDS, ID = 0.5mA VGS = VDS, ID = 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 250mA VGS = 10V, ID = 500mA ID = 0.5A, VGS = 10V VDS = 25V, ID = 500mA Typ Max Unit V Conditions ID = 1mA, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF PULSE GENERATOR Rgen VDD RL OUTPUT D.U.T. 10% 10% INPUT 7-36 TN0106/TN0110 Typical Performance Curves Output Characteristics 5 5 Saturation Characteristics 4 4 VGS = 10V ID (amperes) VGS = 10V 8V 2 ID (amperes) 3 3 8V 2 6V 6V 1 1 4V 2V 0 10 20 30 40 50 4V 2V 0 2 4 6 8 10 0 0 VDS (volts) Transconductance vs. Drain Current 0.5 10 VDS (volts) Power Dissipation vs. Case Temperature 7 TA = -55C 0.4 8 TA = 25C GFS (siemens) TA = 150C 0.2 PD (watts) 0.3 6 4 0.1 2 VDS = 25V 0 0 .6 1.2 1.8 2.4 3.0 0 TO-92 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TC ( C) Thermal Response Characteristics TC = 25C TO-92 (pulsed) Thermal Resistance (normalized) 0.8 ID (amperes) 1.0 0.6 TO-92 (DC) 0.1 0.4 0.2 TO-92 TC = 25C PD = 1W 0.01 1 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 7-37 TN0106/TN0110 Typical Performance Curves BVDSS Variation with Temperature 1.3 5.0 On-Resistance vs. Drain Current VGS = 5V VGS = 10V 1.2 4.0 BVDSS (normalized) 1.1 RDS(ON) (ohms) 3.0 1.0 2.0 0.9 1.0 0.8 -50 0 50 100 150 0 0 1.0 2.0 3.0 4.0 5.0 Tj ( C) Transfer Characteristics 3.0 1.4 ID (amperes) V(th) and RDS Variation with Temperature 1.4 VDS = 25V 2.4 TA = -55C 1.2 V(th)@ 0.5mA 1.2 ID (amperes) 25C 1.8 1.0 150C 1.2 RDS(ON) @ 10V, 0.5A 1.0 0.8 0.8 0.6 0.6 0.6 0 0.4 0 2 4 6 8 10 -50 0 50 100 150 0.4 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj ( C) Gate Drive Dynamic Characteristics f = 1MHz 8 75 VDS = 10V 55pF C (picofarads) VGS (volts) 40V 6 CISS 50 4 COSS 25 2 CRSS 0 0 10 20 30 40 0 0 1.0 50pF 2.0 3.0 4.0 5.0 VDS (volts) QG (nanocoulombs) 7-38 RDS(ON) (normalized) VGS(th) (normalized) |
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